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SCT2H12NYTB Images
- Manufacturer: ROHM
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: TO-268
- Description: SICFET N-CH 1700V 4A TO268
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SCT2H12NYTB Specifications:
- MfrPart.: SCT2H12NYTB
- Mfr: Rohm Semiconductor
- Description: SICFET N-CH 1700V 4A TO268
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: -
- PartStatus: Active
- FETType: N-Channel
- Technology: SiCFET (Silicon Carbide)
- DraintoSourceVoltage(Vdss): 1700 V
- Current-ContinuousDrain(Id)@25°C: 4A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 18V
- RdsOn(Max)@IdVgs: 1.5Ohm @ 1.1A, 18V
- Vgs(th)(Max)@Id: 4V @ 410µA
- GateCharge(Qg)(Max)@Vgs: 14 nC @ 18 V
- Vgs(Max): +22V, -6V
- InputCapacitance(Ciss)(Max)@Vds: 184 pF @ 800 V
- FETFeature: -
- PowerDissipation(Max): 44W (Tc)
- OperatingTemperature: 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: TO-268
- SCT2H12NYTB ROHM, SICFET N-CH 1700V 4A TO268, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SCT2H12NYTB, ROHM authentic parts in stock from ROHM authorized distributors, order today, can ship immediately.
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